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BSS138N H6327

Name: Infineon BSS138N H6327
Brand: Infineon Technologies
SKU: 726-BSS138NH6327
Price: 0.29 EUR
Availability: InStock

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Mouser No:

726-BSS138NH6327

Mfr. No:

BSS138N H6327

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 60V 230mA SOT-23-3

Datasheet:

BSS138N H6327 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSS138N H6327

In Stock: 179.769

Stock:: 179.769

Can Dispatch Immediately

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On Order:: 162.000

Expected 23/02/2026

89.950

57.000

TBD

32.950

TBD
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 431719 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,292 €	0,29 €
	0,202 €	2,02 €
	0,128 €	12,80 €
	0,079 €	39,50 €
	0,058 €	58,00 €
Full Reel (Order in multiples of 3000)
	0,04 €	120,00 €
	0,035 €	315,00 €
	0,032 €	768,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

SP000919330

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,29 €

Min:

Mfr. Part No.:

BSS138NH6327XTSA2

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,21 €

Min:

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

BSS138NH6327XTSA2

Description:

MOSFETs N-Ch 60V 230mA SOT-23-3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	230 mA
Rds On - Drain-Source Resistance:	2.2 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	360 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8.2 ns
Forward Transconductance - Min:	100 mS
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	BSS138
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	6.7 ns
Typical Turn-On Delay Time:	2.3 ns
Part # Aliases:	BSS138NH6327XT SP000919330 BSS138NH6327XTSA2
Unit Weight:	8 mg

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Printable assembly instructions are available on this part page on 
Mouser.com

Please contact a Mouser Technical Sales Representative for further 
information.

5-0222-5

Filter Document:

Datasheet

BSS138N H6327 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Small Signal Power MOSFETs

Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.
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