SSM2212RZ

Analog Devices
584-SSM2212RZ
SSM2212RZ

Mfr.:

Description:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor

ECAD Model:
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In Stock: 1.077

Stock:
1.077 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,17 € 9,17 €
7,17 € 71,70 €
5,98 € 586,04 €
5,32 € 3.128,16 €
4,52 € 4.872,56 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
9,17 €
Min:
1

Similar Product

Analog Devices SSM2212RZ-R7
Analog Devices
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor

Product Attribute Attribute Value Select Attribute
Analog Devices Inc.
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOIC-8
NPN
Dual
20 mA
40 V
40 V
50 mV
200 MHz
- 40 C
+ 85 C
SSM2212
Tube
Brand: Analog Devices
DC Collector/Base Gain hFE Min: 200 at 10 uA, 15 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 98
Subcategory: Transistors
Unit Weight: 540 mg
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Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

SSM2212 Dual-Matched NPN Transistor

Analog Devices SSM2212 Dual-Matched NPN Transistors are dual, NPN-matched transistor pairs specifically designed to meet the requirements of ultra-low noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.