IXSA80N120L2-7TR

IXYS
747-IXSA80N120L2-7TR
IXSA80N120L2-7TR

Mfr.:

Description:
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 760

Stock:
760 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,32 € 10,32 €
8,40 € 84,00 €
6,58 € 658,00 €
6,24 € 3.120,00 €
Full Reel (Order in multiples of 800)
6,04 € 4.832,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7L
N-Channel
1 Channel
1.2 kV
79 A
39 mOhms
- 5 V, + 20 V
4.5 V
135 nC
- 55 C
+ 175 C
395 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 13.6 ns
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 24.6 ns
Series: IXSA80N120L2-7
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 28.6 ns
Typical Turn-On Delay Time: 15.4 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

IXSA80N120L2-7 SiC MOSFET

IXYS IXSA80N120L2-7 SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting power cycling characteristics and very fast, low-loss switching behavior. This MOSFET features low conduction losses, low gate drive power requirements, and low thermal management effort and is optimized for gate control. The IXSA80N120L2-7 SiC MOSFET is used for high-speed industrial switch-mode power supplies. This SiC MOSFET is ideal for solar inverters, switch-mode power supplies, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating.