BSM50GD120DN2

Mouser No:

641-BSM50GD120DN2

Mfr. No:

BSM50GD120DN2

Mfr.:

Infineon Technologies
Infineon Technologies

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Product:	IGBT Silicon Modules
Configuration:	Hex
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.5 V
Continuous Collector Current at 25 C:	72 A
Gate-Emitter Leakage Current:	200 nA
Pd - Power Dissipation:	350 W
Package/Case:	EconoPACK 2A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Height:	17 mm
Length:	107.5 mm
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Width:	45 mm
Part # Aliases:	SP000100359 BSM50GD120DN2BOSA1
Unit Weight:	250,125 g

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