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BSZ021N04LS6ATMA1

Name: Infineon BSZ021N04LS6ATMA1
Brand: Infineon Technologies
SKU: 726-BSZ021N04LS6ATMA
Price: 1.15 EUR
Availability: InStock

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Mouser No:

726-BSZ021N04LS6ATMA

Mfr. No:

BSZ021N04LS6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

BSZ021N04LS6ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies BSZ021N04LS6ATMA1

In Stock: 10.335

Stock:: 10.335 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,15 €	1,15 €
	0,937 €	9,37 €
	0,812 €	81,20 €
	0,742 €	371,00 €
	0,62 €	620,00 €
	0,572 €	1.430,00 €
Full Reel (Order in multiples of 5000)
	0,542 €	2.710,00 €
	0,541 €	5.410,00 €
25.000	Quote

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSDSON-FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	110 S
Product Type:	MOSFETs
Rise Time:	1.6 ns
Series:	BSZ0xx
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	BSZ021N04LS6 SP001477562
Unit Weight:	38,760 mg

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Datasheet

BSZ021N04LS6ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.