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IMZC120R007M2HXKSA1

Name: Infineon IMZC120R007M2HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZC120R007M2HXK
Price: 32.3 EUR
Availability: InStock

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Mouser No:

726-IMZC120R007M2HXK

Mfr. No:

IMZC120R007M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMZC120R007M2HXKSA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMZC120R007M2HXKSA1

In Stock: 187

Stock:: 187 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	32,30 €	32,30 €
	28,06 €	280,60 €
	24,30 €	2.430,00 €
	21,06 €	10.108,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	PG-TO247-4-U07
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	176 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	711 W
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Enhancement
Fall Time:	33.6 ns
Forward Transconductance - Min:	60 S
Packaging:	Tube
Product:	MOSFET
Product Type:	SiC MOSFETS
Rise Time:	21.5 ns
Series:	CoolSiC G2
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	76.3 ns
Typical Turn-On Delay Time:	32.4 ns
Part # Aliases:	IMZC120R007M2H SP006031756

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Datasheet

IMZC120R007M2HXKSA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.