ST8L65N050DM9

STMicroelectronics
511-ST8L65N050DM9
ST8L65N050DM9

Mfr.:

Description:
MOSFETs N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
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Lifecycle:
New Product:
New from this manufacturer.
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In Stock: 210

Stock:
210 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,66 € 6,66 €
4,70 € 47,00 €
Full Reel (Order in multiples of 3000)
4,70 € 14.100,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
Si
SMD/SMT
PowerFLAT-4
N-Channel
1 Channel
650 V
55 A
35 mOhms
- 30 V, 30 V
4.5 V
107 nC
- 55 C
+ 150 C
167 W
Enhancement
Reel
Cut Tape
Brand: STMicroelectronics
Configuration: Single
Fall Time: 3.5 ns
Forward Transconductance - Min: 167 W
Product Type: MOSFETs
Rise Time: 7 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 25 ns
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Datasheet

TARIC:
8541290000

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

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