STDRIVEG600

STMicroelectronics
511-STDRIVEG600
STDRIVEG600

Mfr.:

Description:
Gate Drivers High voltage half-bridge gate driver for GaN transistors
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Datasheet:
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Learn more about STMicroelectronics STDRIVEG600

In Stock: 690

Stock:
690 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,27 € 4,27 €
3,29 € 32,90 €
3,02 € 75,50 €
2,80 € 280,00 €
2,44 € 2.440,00 €
2,43 € 4.860,00 €

Alternative Packaging

Mfr. Part No.:
STDRIVEG600TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
3,60 €
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SOIC-16
2 Driver
1 Output
5.5 A, 6 A
4.75 V
20 V
7 ns
5 ns
- 40 C
+ 125 C
Tube
Brand: STMicroelectronics
Logic Type: CMOS, TTL
Moisture Sensitive: Yes
Output Voltage: 520 V
Product Type: Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Compliance Codes
CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

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