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CSD19537Q3

Name: Texas Instruments CSD19537Q3
Brand: Texas Instruments
SKU: 595-CSD19537Q3
Price: 1.27 EUR
Availability: InStock

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Mouser No:

595-CSD19537Q3

Mfr. No:

CSD19537Q3

Mfr.:

Texas Instruments

Description:

MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19537Q3T

Datasheet:

CSD19537Q3 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19537Q3

In Stock: 3.587

Stock:: 3.587 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,27 €	1,27 €
	0,877 €	8,77 €
	0,58 €	58,00 €
	0,507 €	253,50 €
	0,464 €	464,00 €
Full Reel (Order in multiples of 2500)
	0,416 €	1.040,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19537Q3T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,84 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19537Q3T

Description:

MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19537Q3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	14.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	CSD19537Q3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	5 ns
Unit Weight:	24 mg

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Datasheet

CSD19537Q3 Datasheet

Models

CSD19537Q3 Symbol & Footprint by SnapMagic

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD19537Q3 N-Channel NexFET™ Power MOSFETs

Texas Instruments CSD19537Q3 N-Channel NexFET™ Power MOSFETs are a 100V 12.1mΩ N-Channel NexFET™ power MOSFET that is designed to minimize losses in power conversion applications. This MOSFET features an ultra-low Qg and Qgd with low thermal resistance. It is also avalanche rated and comes in Pb-Free, halogen free RoHS complant SON-8 3.3mmx3.3mm plastic package. Typical applications include primary side isolated converters and motor control.
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