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CSD25484F4T

Name: Texas Instruments CSD25484F4T
Brand: Texas Instruments
SKU: 595-CSD25484F4T
Price: 0.62 EUR
Availability: InStock

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Mouser No:

595-CSD25484F4T

Mfr. No:

CSD25484F4T

Mfr.:

Texas Instruments

Description:

MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25484 A 595-CSD25484F4

Datasheet:

CSD25484F4T Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25484F4T

In Stock: 2.986

Stock:: 2.986 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,628 €	0,63 €
	0,593 €	5,93 €
	0,366 €	36,60 €
Full Reel (Order in multiples of 250)
	0,366 €	91,50 €
	0,325 €	162,50 €
	0,298 €	298,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25484F4

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,37 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD25484F4

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25484F4T

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	825 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	1.09 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	FemtoFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	8.5 ns
Forward Transconductance - Min:	3.5 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD25484F4
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	0,400 mg

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TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.