DRV8300DIPWR

Texas Instruments
595-DRV8300DIPWR
DRV8300DIPWR

Mfr.:

Description:
Gate Drivers 100-V max simple 3-p hase gate driver wi

ECAD Model:
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In Stock: 1.365

Stock:
1.365 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,38 € 1,38 €
0,86 € 8,60 €
0,748 € 18,70 €
0,587 € 58,70 €
0,519 € 129,75 €
0,466 € 233,00 €
0,423 € 423,00 €
Full Reel (Order in multiples of 3000)
0,383 € 1.149,00 €
0,341 € 2.046,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
TSSOP-20
3 Driver
6 Output
750 mA
5 V
20 V
Inverting
24 ns
12 ns
- 40 C
+ 125 C
DRV8300
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Development Kit: DRV8300DIPW-EVM
Logic Type: CMOS
Moisture Sensitive: Yes
Product Type: Gate Drivers
Propagation Delay - Max: 180 ns
Shutdown: No Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

DRV8300/DRV8300-Q1 3-Phase Gate Drivers

Texas Instruments DRV8300/DRV8300-Q1 3-Phase Gate Drivers provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D/DRV8300D-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Texas Instruments DRV8300/DRV8300-Q1 gate drive architecture supports peak up to 750mA source and 1.5A sink currents.