GT30J121(Q)

Toshiba
757-GT30J121(Q)
GT30J121(Q)

Mfr.:

Description:
IGBTs 600V/30A DIS

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 82

Stock:
82 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,65 € 3,65 €
2,41 € 24,10 €
1,69 € 169,00 €
1,39 € 695,00 €
1,37 € 1.370,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
600 V
2 V
- 20 V, 20 V
30 A
170 W
- 55 C
+ 150 C
GT30J121
Tube
Brand: Toshiba
Continuous Collector Current Ic Max: 30 A
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Unit Weight: 6,756 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99