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TK4R9E15Q5,S1X

Name: Toshiba TK4R9E15Q5,S1X
Brand: Toshiba
SKU: 757-TK4R9E15Q5S1X
Price: 4.25 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK4R9E15Q5S1X

Mfr. No:

TK4R9E15Q5,S1X

Mfr.:

Toshiba

Description:

MOSFETs TO220 150V 2.2A N-CH

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK4R9E15Q5,S1X Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK4R9E15Q5,S1X

In Stock: 381

Stock:: 381 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,25 €	4,25 €
	2,55 €	25,50 €
	2,42 €	242,00 €
	2,16 €	1.080,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	4.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	96 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	77 ns
Product Type:	MOSFETs
Rise Time:	87 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	140 ns
Typical Turn-On Delay Time:	120 ns

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Datasheet

TK4R9E15Q5,S1X Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.