TK62J60W,S1VQ

Toshiba
757-TK62J60WS1VQ
TK62J60W,S1VQ

Mfr.:

Description:
MOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC

ECAD Model:
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In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
14,60 € 14,60 €
8,31 € 83,10 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-3PN-3
N-Channel
1 Channel
600 V
61.8 A
33 mOhms
- 30 V, 30 V
3.7 V
180 nC
- 55 C
+ 150 C
30 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 15 ns
Product Type: MOSFETs
Rise Time: 58 ns
Series: TK62J60W
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 310 ns
Typical Turn-On Delay Time: 115 ns
Unit Weight: 4,600 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.