NXH80T120L3Q0S3TG

onsemi
863-NXH80T120L3Q0S3T
NXH80T120L3Q0S3TG

Mfr.:

Description:
IGBT Modules PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM)

ECAD Model:
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In Stock: 23

Stock:
23 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
62,17 € 62,17 €
49,39 € 493,90 €
46,68 € 5.601,60 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBT Modules
RoHS:  
IGBT Modules
1.2 kV
75 A
300 nA
82 W
Q0PACK
- 40 C
+ 175 C
Tray
Brand: onsemi
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Press Fit
Product Type: IGBT Modules
Series: NXH80T120L3Q0
Factory Pack Quantity: 24
Subcategory: IGBTs
Technology: Si
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

NXH80T120L3Q0 Power Integrated Module (PIM)

onsemi NXH80T120L3Q0 Power Integrated Module (PIM) contains a T-type neutral-point-clamped (NPC) three-level inverter stage. This three-level inverter consists of two 80A/1200V half-bridge IGBTs with 40A/1200V half-bridge diodes. The NXH80T120L3Q0 power integrated module offers two 50A/600V neutral point clamped (NPC) IGBTs with two 50A/600V NPC diodes. This PIM features lower conduction losses, switching losses, and low VCESAT, enabling designers to achieve high efficiency and superior reliability. The NXH80T120L3Q0 power integrated module offers options with pre-applied thermal interface material (TIM) and without pre-applied TIM, options with solderable pins, press-fit pins, and thermistor. This offers a maximum operating junction temperature of 150°C (under switching conditions). The NXH80T120L3Q0 power integrated module is ideally used in solar inverters and uninterruptable power supplies.