It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DMG4800LSD-13

Name: Diodes Incorporated DMG4800LSD-13
Brand: Diodes Incorporated
SKU: 621-DMG4800LSD-13
Price: 0.72 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

621-DMG4800LSD-13

Mfr. No:

DMG4800LSD-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs Dual N-Ch 30V VDSS 25 Vgss 42A IDM

Datasheet:

DMG4800LSD-13 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diodes Incorporated DMG4800LSD-13

In Stock: 1.784

Stock:: 1.784

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 7.500

Expected 06/03/2026

7.500

Expected 22/04/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,722 €	0,72 €
	0,449 €	4,49 €
	0,292 €	29,20 €
	0,223 €	111,50 €
	0,201 €	201,00 €
Full Reel (Order in multiples of 2500)
	0,171 €	427,50 €
	0,155 €	775,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	7.5 A
Rds On - Drain-Source Resistance:	16 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	8.56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.17 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	8.55 ns
Product Type:	MOSFETs
Rise Time:	4.5 ns
Series:	DMG4800
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	26.33 ns
Typical Turn-On Delay Time:	5.03 ns
Unit Weight:	750 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DMG4800LSD-13 Datasheet (PDF)

PCN

PRODUCT CHANGE NOTICE (PDF)

Environmental Compliance (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMG44x & DMG48x Enhancement Mode MOSFETs

The Diodes Inc. DMG44x and DMG48x Enhancement Mode MOSFETs are high-reliability N-channel enhancement mode MOSFETs. These DMG44x and DMG48x enhancement mode MOSFETs feature low on-resistance, low input capacitance, fast switching speed, and low input/output leakage.