It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DMN2990UFZ-7B

Name: Diodes Incorporated DMN2990UFZ-7B
Brand: Diodes Incorporated
SKU: 621-DMN2990UFZ-7B
Price: 0.41 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

621-DMN2990UFZ-7B

Mfr. No:

DMN2990UFZ-7B

Mfr.:

Diodes Incorporated

Description:

MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF

Datasheet:

DMN2990UFZ-7B Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diodes Incorporated DMN2990UFZ-7B

In Stock: 12.417

Stock:: 12.417 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,413 €	0,41 €
	0,252 €	2,52 €
	0,16 €	16,00 €
	0,12 €	60,00 €
	0,096 €	96,00 €
	0,084 €	420,00 €
Full Reel (Order in multiples of 10000)
	0,079 €	790,00 €
	0,073 €	1.460,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X2-DFN0606-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	250 mA
Rds On - Drain-Source Resistance:	990 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	7.7 ns
Forward Transconductance - Min:	180 mS
Product Type:	MOSFETs
Rise Time:	2.1 ns
Series:	DMN2990
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	3.5 ns
Unit Weight:	1 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DMN2990UFZ-7B Datasheet (PDF)

PCN

Product Change Notification (PDF)

Environmental Compliance (PDF)

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMxx Miniature Enhancement Mode MOSFETs

Diode Inc. DMxx Miniature Enhancement Mode MOSFETs are designed to minimize on-state resistance (R_DS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.