+31 88 1300 700

Part of the TTI Family of Specialists Contact Mouser (Netherlands) +31 88 1300 700 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGW40N60H3

Name: Infineon IGW40N60H3
Brand: Infineon Technologies
SKU: 726-IGW40N60H3
Price: 4.3 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGW40N60H3

Mfr. No:

IGW40N60H3

Mfr.:

Infineon Technologies

Description:

IGBTs 600V 40A 306W

Datasheet:

IGW40N60H3 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IGW40N60H3

In Stock: 235

Stock:: 235

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 240

Expected 26/05/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,30 €	4,30 €
	2,21 €	22,10 €
	2,01 €	201,00 €
	1,65 €	792,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.95 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	306 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	HighSpeed 3
Packaging:	Tube
Brand:	Infineon Technologies
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	SP000769926 IGW4N6H3XK IGW40N60H3FKSA1
Unit Weight:	6,500 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGW40N60H3 Datasheet (PDF)

Product Catalogs

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

High Speed Trench & Fieldstop IGBTs

Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low V_CEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.