IPB95R450PFD7ATMA1

Infineon Technologies
726-IPB95R450PFD7ATM
IPB95R450PFD7ATMA1

Mfr.:

Description:
MOSFETs LOW POWER_NEW

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.000
Expected 09/04/2026
Factory Lead Time:
19
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,73 € 2,73 €
1,77 € 17,70 €
1,30 € 130,00 €
1,09 € 545,00 €
Full Reel (Order in multiples of 1000)
1,03 € 1.030,00 €
0,857 € 1.714,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
- 30 V, 30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel
Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4.7 ns
Product Type: MOSFETs
Rise Time: 8.7 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 9 ns
Part # Aliases: IPB95R450PFD7 SP005547014
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).