IXSG60N65L2K

IXYS
747-IXSG60N65L2K
IXSG60N65L2K

Mfr.:

Description:
SiC MOSFETs SiC MOSFET in TOLL

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about IXYS IXSG60N65L2K

In Stock: 2.100

Stock:
2.100 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
7,77 € 7,77 €
5,65 € 56,50 €
4,70 € 470,00 €
4,20 € 2.100,00 €
3,73 € 3.730,00 €
Full Reel (Order in multiples of 2000)
3,73 € 7.460,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TTOLL-8
N-Channel
1 Channel
650 V
60 A
53 mOhms
- 5 V, 20 V
4.5 V
94.7 nC
- 55 C
+ 175 C
249 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 8 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 14.1 ns
Series: IXSxNxL2Kx
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 7 ns
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Attributes selected: 0

Datasheet

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IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

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