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NTMYS2D4N04CTWG

Name: onsemi NTMYS2D4N04CTWG
Brand: onsemi
SKU: 863-NTMYS2D4N04CTWG
Price: 1.98 EUR
Availability: InStock

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Mouser No:

863-NTMYS2D4N04CTWG

Mfr. No:

NTMYS2D4N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 140A 2.3Ohm Single N-Channel

Datasheet:

NTMYS2D4N04CTWG Datasheet

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In Stock: 2.935

Stock:: 2.935 Can Dispatch Immediately

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Factory Lead Time:: 34 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,98 €	1,98 €
	1,38 €	13,80 €
	0,869 €	86,90 €
	0,72 €	360,00 €
Full Reel (Order in multiples of 3000)
	0,624 €	1.872,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	138 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	18 ns
Forward Transconductance - Min:	92 S
Product Type:	MOSFETs
Rise Time:	50 ns
Series:	NTMYS2D4N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	75 mg

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Datasheet

NTMYS2D4N04CTWG Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Industrial N-Channel Power MOSFETs

onsemi LFPAK4 Industrial N-channel Power MOSFETs are single MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These industrial-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide, -55°C to +175°C operating temperature range.