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PMDXB1200UPEZ

Name: Nexperia PMDXB1200UPEZ
Brand: Nexperia
SKU: 771-PMDXB1200UPEZ
Price: 0.41 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

771-PMDXB1200UPEZ

Mfr. No:

PMDXB1200UPEZ

Mfr.:

Nexperia

Description:

MOSFETs PMDXB1200UPE/SOT1216/DFN1010B-

Datasheet:

PMDXB1200UPEZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB1200UPEZ

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 15.140

Expected 08/02/2027
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,413 €	0,41 €
	0,253 €	2,53 €
	0,161 €	16,10 €
	0,12 €	60,00 €
	0,096 €	96,00 €
Full Reel (Order in multiples of 5000)
	0,083 €	415,00 €
	0,077 €	770,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1010-6
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	410 mA
Rds On - Drain-Source Resistance:	1.4 Ohms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	1.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	410 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	MOSFETs
Factory Pack Quantity:	5000
Subcategory:	Transistors
Part # Aliases:	934069327147
Unit Weight:	1,229 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.