STGB30M65DF2

STMicroelectronics
511-STGB30M65DF2
STGB30M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss
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Datasheet:
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In Stock: 1.470

Stock:
1.470 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,77 € 2,77 €
1,81 € 18,10 €
1,26 € 126,00 €
1,07 € 535,00 €
Full Reel (Order in multiples of 1000)
0,937 € 937,00 €
0,902 € 1.804,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
60 A
258 W
- 55 C
+ 175 C
STGB30M65DF2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,380 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

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