STGP30M65DF2

STMicroelectronics
511-STGP30M65DF2
STGP30M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss

ECAD Model:
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In Stock: 980

Stock:
980 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,73 € 2,73 €
1,24 € 12,40 €
1,14 € 114,00 €
0,998 € 499,00 €
0,92 € 920,00 €
0,887 € 1.774,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
258 W
- 55 C
+ 175 C
STGP30M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.