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TK155U60Z1,RQ

Name: Toshiba TK155U60Z1,RQ
Brand: Toshiba
SKU: 757-TK155U60Z1RQ
Price: 2.98 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK155U60Z1RQ

Mfr. No:

TK155U60Z1,RQ

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 600 V, 0.155 ohma.10V, TOLL, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK155U60Z1,RQ Datasheet

ECAD Model:

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More Information

Learn more about Toshiba TK155U60Z1,RQ

In Stock: 1.997

Stock:: 1.997 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,98 €	2,98 €
	1,94 €	19,40 €
	1,35 €	135,00 €
	1,17 €	585,00 €
Full Reel (Order in multiples of 2000)
	0,995 €	1.990,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TOLL-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	155 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	24 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	34 ns

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Datasheet

TK155U60Z1,RQ Datasheet

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.