STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss 380In Stock
Min.: 1
Mult.: 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss 3.710In Stock
Min.: 1
Mult.: 1
Reel: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 980In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1.457In Stock
Min.: 1
Mult.: 1
Reel: 1.000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss 2.128In Stock
Min.: 1
Mult.: 1
Reel: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 54In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1.470In Stock
Min.: 1
Mult.: 1
Reel: 1.000

Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss 679In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads 692In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 15 A low loss 140In Stock
Min.: 1
Mult.: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1.131In Stock
Min.: 1
Mult.: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss 447In Stock
2.000Expected 09/11/2026
Min.: 1
Mult.: 1

Si STGP10M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss 344In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
396Expected 26/03/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss Non-Stocked Lead-Time 15 Weeks
Min.: 2.000
Mult.: 1.000
Reel: 1.000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel