RGT20NL65GTL

ROHM Semiconductor
755-RGT20NL65GTL
RGT20NL65GTL

Mfr.:

Description:
IGBTs 5s Short-Circuit Tolerance, 650V 10A, LPDL, Field Stop Trench IGBT

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 1.000

Stock:
1.000 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1000 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,58 € 2,58 €
1,68 € 16,80 €
1,16 € 116,00 €
0,963 € 481,50 €
Full Reel (Order in multiples of 1000)
0,86 € 860,00 €
2.000 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-263-3
SMD/SMT
Single
650 V
2.1 V
30 V
20 A
53 W
- 40 C
+ 175 C
Reel
Cut Tape
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Part # Aliases: RGT20NL65
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Attributes selected: 0

Datasheet

Specification Sheets

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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

RGT20NL65 Field Stop Trench IGBT

ROHM Semiconductor RGT20NL65 Field Stop Trench IGBT features low collector-emitter saturation voltage, ideal for general inverter, UPS, power conditioner, and welding applications. The ROHM RGT20NL65 Field Stop Trench IGBT offers a short circuit withstand time of 5μs. Additionally, the device is specified to ±30V gate - emitter voltage and a 20A @ 25°C collector current.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

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