UG4SC 750V 8.4mΩ Combo-FETs

onsemi UG4SC 750V 8.4mΩ Combo-FETs combine a 750V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package. This design enables a normally off switch while benefiting from the ultra-low on-resistance [RDS(on)] and robustness of a normally on SiC JFET. The UG4SC Combo-FET series from onsemi is ideal for high-energy switching in circuit protection. For switch-mode power conversion, the devices offer separate gate access to the JFET and MOSFET, enhancing speed control and simplifying the paralleling of multiple devices.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Configuration Vds - Drain-Source Breakdown Voltage Vgs - Gate-Source Breakdown Voltage Drain-Source Current at Vgs=0 Id - Continuous Drain Current Rds On - Drain-Source Resistance Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging
onsemi JFETs UG4SC075005L8S 1.793In Stock
Min.: 1
Mult.: 1
Reel: 2.000

SiC SMD/SMT MO-229-8 N-Channel Single 750 V - 30 V to 30 V 6 uA 120 A 5 mOhms 1.153 kW - 55 C + 175 C UG4S Reel, Cut Tape
onsemi JFETs 750V/9MOCOMBO-FETG4TO247-4 577In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 4 uA 106 A 8.4 mOhms 375 W - 55 C + 175 C UG4S Tube
onsemi JFETs 750V/6MOCOMBO-FETG4TO247-4 345In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 6 uA 120 A 5.3 mOhms 714 W - 55 C + 175 C UG4S Tube
onsemi JFETs 750V/11MOCOMBO-FETG4TO247-4 558In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel Single 750 V - 30 V to 30 V 3.5 uA 104 A 10 mOhms 357 W - 55 C + 175 C UG4S Tube