DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Results: 113
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC 58In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC 76In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms 30 V 3.7 V 25 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 0.22ohm DTMOS 12In Stock
100Expected 21/09/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms 30 V 3.5 V 35 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFETs Power MOSFET N-Channel 68In Stock
2.000Expected 16/10/2026
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFETs MOSFET NChannel 0.22ohm DTMOS 99In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC 297In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 30 V 4.5 V 43 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC 99In Stock
150Expected 18/12/2026
Min.: 1
Mult.: 1

Si N-Channel 1 Channel DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC 57In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS 73In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS 74In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray

Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF 17In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 6In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 200 mOhms 30 V 3.5 V 45 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 2050pF 32nC 17A 45W 154In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms 20 V 3 V 32 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 145In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.5 A 190 mOhms 30 V 2.7 V 38 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChtrr100ns 0.25ohm DTMOS 32In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 150 mOhms 30 V 4.5 V 55 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS 80In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 175 mOhms 30 V 4.5 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A 58In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 130 mOhms 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS 100In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 20 A 155 mOhms 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tray

Toshiba MOSFETs Power MOSFET N-Channel 38In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 150 mOhms 30 V 3 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube

Toshiba MOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A 83In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 130 mOhms 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel 31In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms 30 V 2.5 V 75 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube

Toshiba MOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS 60In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 27.6 A 130 mOhms 30 V 4.5 V 90 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC 47In Stock
100Expected 21/09/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.7 V 86 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 30.8A 290W FET 600V 3000pF 86nC 24In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr135ns 0.082ohm DTMOS 47In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 82 mOhms 30 V 4.5 V 105 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube