Power MOSFETs

YAGEO XSemi Power MOSFETs use advanced processing techniques for low on-resistance, efficiency, and cost-effectiveness. YAGEO XSemi Power MOSFETs are available in different packages to fit application needs. Packages available for the device are widely used for commercial and industrial applications.

Results: 79
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
YAGEO XSemi MOSFETs N-CH 60V 2.5A SOT-23S
Datasheet
1.664In Stock
6.000Expected 16/02/2027
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23S-3 N-Channel 1 Channel 60 V 2.5 A 90 mOhms 20 V 3 V 5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs P-CH -60V -1. 6A SOT-23S
Datasheet
519In Stock
6.000Expected 16/11/2026
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 60 V 1.6 A 250 mOhms 20 V 3 V 5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel
YAGEO XSemi MOSFETs N-CH 100V 48. 5A TO-251
Datasheet
4.000Expected 28/12/2026
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 100 V 48.5 A 11 mOhms 20 V 4 V 35 nC - 55 C + 150 C 1.13 W Enhancement Tube
YAGEO XSemi MOSFETs P-CH -30V -3. 9A SOT-23S
Datasheet
2.955Expected 27/10/2026
MouseReel Available
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23S-3 P-Channel 1 Channel 30 V 3.9 A 55 mOhms 20 V 3 V 6.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel