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RD3U041AAFRATL

Name: ROHM Semiconductor RD3U041AAFRATL
Brand: ROHM Semiconductor
SKU: 755-RD3U041AAFRATL
Price: 1.92 EUR
Availability: InStock

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Mouser No:

755-RD3U041AAFRATL

Mfr. No:

RD3U041AAFRATL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 250V(Vdss), 4.1A(Id), (10V Drive)

Datasheet:

RD3U041AAFRATL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3U041AAFRATL

In Stock: 1.998

Stock:: 1.998 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,92 €	1,92 €
	1,23 €	12,30 €
	0,833 €	83,30 €
	0,666 €	333,00 €
	0,63 €	630,00 €
Full Reel (Order in multiples of 2500)
	0,552 €	1.380,00 €
	0,545 €	2.725,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Series:	RD3
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Fall Time:	15 ns
Id - Continuous Drain Current:	4 A
Number of Channels:	1 Channel
Package/Case:	TO-252-3
Pd - Power Dissipation:	29 W
Product Type:	MOSFETs
Qg - Gate Charge:	8.5 nC
Rds On - Drain-Source Resistance:	1.3 Ohms
Rise Time:	14 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Part # Aliases:	RD3U041AAFRA
Unit Weight:	330 mg

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Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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Datasheet

RD3U041AAFRATL Datasheet

Specification Sheets

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

RD3U041AAFRA N-Ch 250V 4A Power MOSFET

ROHM Semiconductor RD3U041AAFRA N-Ch 250V 4A Power MOSFET features low on-resistance and fast switching. With simple drive circuits and a 250V drain-source voltage, the RD3U041AAFRA is suitable for switching applications. The ROHM RD3U041AAFRA N-Ch 250V 4A Power MOSFET is an automotive-grade MOSFET, which is AEC-Q101 qualified.