STPSC2H12B2Y-TR

STMicroelectronics
511-STPSC2H12B2Y-TR
STPSC2H12B2Y-TR

Mfr.:

Description:
SiC Schottky Diodes Automotive 1200 V, 2 A High surge Silicon Carbide Diode
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In Stock: 4.760

Stock:
4.760 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,67 € 2,67 €
1,70 € 17,00 €
1,18 € 118,00 €
0,998 € 499,00 €
0,937 € 937,00 €
Full Reel (Order in multiples of 2500)
0,859 € 2.147,50 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
STPSC
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2500
Subcategory: Diodes & Rectifiers
Unit Weight: 350 mg
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC2H12-Y Schottky Silicon Carbide Diodes

STMicroelectronics STPSC2H12-Y Schottky Silicon Carbide Diodes are ultra-high-performance power Schottky diodes. STMicroelectronics STPSC2H12-Y diodes are manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200V rating. Due to the Schottky construction, norecovery is shown at turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

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