IRS2334STRPBF

Infineon Technologies
942-IRS2334STRPBF
IRS2334STRPBF

Mfr.:

Description:
Gate Drivers Gen5 HVIC 600V 35A 3 Phase Gt Drvr

Datasheet:
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Learn more about Infineon Technologies IRS2334STRPBF

In Stock: 1.533

Stock:
1.533 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,03 € 2,03 €
1,51 € 15,10 €
1,38 € 34,50 €
1,23 € 123,00 €
1,16 € 290,00 €
1,13 € 565,00 €
Full Reel (Order in multiples of 1000)
0,998 € 998,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
IRS2334SPBF
Packaging:
Tube
Availability:
In Stock
Price:
4,21 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SOIC-20
3 Driver
6 Output
200 mA
10 V
20 V
125 ns
50 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Maximum Turn-Off Delay Time: 530 ns
Maximum Turn-On Delay Time: 530 ns
Moisture Sensitive: Yes
Operating Supply Current: 300 uA
Pd - Power Dissipation: 1.14 W
Product Type: Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 801 mg
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TARIC:
8542319000
CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542310075
KRHTS:
8542311000
MXHTS:
8542310302
ECCN:
EAR99

High Voltage Gate Driver ICs

Infineon offers the IRS2334 Series High Voltage Gate Driver ICs as high voltage, high-speed power MOSFET, and IGBT drivers with three independent high side and low side referenced output channels for 3-phase applications. The IRS2334 Series is designed to provide comprehensive protection including proprietary negative voltage spike (Vs) immunity for safe operation under extreme switching conditions and short circuit events. These devices feature proprietary HVIC and latch immune CMOS technology and ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Matched propagation delays for each channel simplify use in high-frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration up to 600V.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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