TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Packaging
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 3A TO-220-2L
Datasheet
1In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8
Datasheet
1.935In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A DFN8x8
Datasheet
3.968In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A DFN8x8
Datasheet
4.476In Stock
2.500Expected 15/05/2026
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8
Datasheet
4.849In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8
Datasheet
2.275In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L
Datasheet
92In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L
Datasheet
120In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L
Datasheet
224In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A TO-220-2L
Datasheet
31In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L
Datasheet
172Expected 05/11/2026
Min.: 1
Mult.: 1

Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A TO-220-2L
Datasheet
150Expected 15/05/2026
Min.: 1
Mult.: 1

Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube