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DMP21D0UFB-7B

Name: Diodes Incorporated DMP21D0UFB-7B
Brand: Diodes Incorporated
SKU: 621-DMP21D0UFB-7B
Price: 0.36 EUR
Availability: InStock

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Mouser No:

621-DMP21D0UFB-7B

Mfr. No:

DMP21D0UFB-7B

Mfr.:

Diodes Incorporated

Description:

MOSFETs 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A

Datasheet:

DMP21D0UFB-7B Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMP21D0UFB-7B

In Stock: 9.693

Stock:: 9.693

Can Dispatch Immediately

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On Order:: 10.000

Expected 13/05/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,361 €	0,36 €
	0,22 €	2,20 €
	0,139 €	13,90 €
	0,104 €	52,00 €
	0,083 €	83,00 €
	0,077 €	385,00 €
Full Reel (Order in multiples of 10000)
	0,077 €	770,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X1-DFN1006-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	770 mA
Rds On - Drain-Source Resistance:	960 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	430 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	18.5 ns
Forward Transconductance - Min:	50 mS
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	DMP21D0UFB
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	1 P-Channel, ESD
Typical Turn-Off Delay Time:	31.7 ns
Typical Turn-On Delay Time:	7.1 ns
Unit Weight:	43,773 mg

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Datasheet

DMP21D0UFB-7B Datasheet (PDF)

PCN

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TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMP21D0UFB 20V P-Channel E-MOSFET

Diodes Incorporated DMP21D0UFB 20V P-Channel E-Mode MOSFET, ideal for power management applications. Designed to minimize the on-state resistance (R_DS(ON)) offering superior switching performance. This MOSFET features low gate threshold voltage, fast switching speed, and 3KV ESD protected gate. The DMP21D0UFB MOSFET comes in a molded plastic case material with a green molding compound. The UL flammability classification rating is 94V-0 and MSL level 1 per J-STD-020D. This MOSFET provides terminals with NiPdAu over the copper lead frame, solderable per MIL-STD-202 (Method 208).