Results: 577
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging
IXYS IGBTs Mid-Frequency Range 15khz-40khz w/ Diode 9In Stock
540On Order
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 600 V 1.5 V 20 V 80 A 200 W - 55 C + 150 C IXGR72N60 Tube
IXYS IGBTs GenX3 600V IGBTs 5In Stock
Min.: 1
Mult.: 1

Si D3PAK-3 (TO-268-3) SMD/SMT Single 600 V 1.35 V 20 V 75 A 540 W - 55 C + 150 C IXGT72N60 Tube

IXYS IGBTs TO247 600V 150A XPT 133In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 600 V 2.5 V - 20 V, 20 V 300 A 1.36 kW - 55 C + 175 C Planar Tube

IXYS IGBTs TO247 600V 30A XPT 158In Stock
Min.: 1
Mult.: 1

Si Single - 20 V, 20 V Planar Tube

IXYS IGBTs XPT 600V IGBT 30A 146In Stock
Min.: 1
Mult.: 1

Si Through Hole Single 600 V 2.4 V - 20 V, 20 V 60 A 270 W - 55 C + 175 C IXXH30N60 Tube
IXYS IGBTs 650V/160A TRENCH IGBT GENX4 XPT 6In Stock
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 650 V 2.1 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C Trench Tube
IXYS IGBTs TO247 1700V 16A IGBT 81In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.7 kV 3.8 V - 20 V, 20 V 40 A 310 W - 55 C + 175 C Tube
IXYS IGBTs XPT 1200V IGBT GenX3 XPT IGBT 217In Stock
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.4 V - 20 V, 20 V 36 A 230 W - 55 C + 150 C IXYH20N120 Tube
IXYS IGBTs 1200V XPT GenX3 IGBT 208In Stock
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.3 V - 20 V, 20 V 75 A 500 W - 55 C + 150 C IXYH30N120 Tube
IXYS IGBTs GenX3 1200V XPT IGBT 66In Stock
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.5 V - 20 V, 20 V 90 A 577 W - 55 C + 175 C IXYH40N120 Tube
IXYS IGBTs XPT 900V IGBT GenX3 XPT IGBT 108In Stock
300Expected 16/07/2026
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 900 V 2.5 V - 20 V, 20 V 90 A 500 W - 55 C + 150 C IXYH40N90 Tube
IXYS IGBTs TO247 1200V 55A XPT 67In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.8 V - 20 V, 20 V 175 A 650 W - 55 C + 175 C Trench Tube

IXYS IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B 389In Stock
Min.: 1
Mult.: 1

Si SOT-227-4 Screw Mount Single 1.2 kV 2.4 V - 20 V, 20 V 220 A 830 W - 55 C + 175 C 1200V XPTTM Gen 6 Tube
IXYS IGBTs GenX3 1200V XPT IGBT 350In Stock
250Expected 23/02/2026
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 1.2 kV 3.3 V - 20 V, 20 V 75 A 500 W - 55 C + 175 C IXYP30N120 Tube
IXYS IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220 265In Stock
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 134 A 395 W - 55 C + 175 C Tube
IXYS IGBTs 900V 8A 2.5V XPT IGBTs GenX3 31In Stock
Min.: 1
Mult.: 1

Si TO-252-3 SMD/SMT Single 900 V 3 V - 20 V, 20 V 20 A 125 W - 55 C + 175 C Planar Tube
IXYS IGBTs N-Channel: Power MOSFET w/Fast Diode 58In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.8 V - 20 V, 20 V 78 A 325 W - 40 C + 125 C IXA45IF1200HB Tube

IXYS IGBTs IGBT, Diode 1200V, 75A 59In Stock
Min.: 1
Mult.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.5 V - 20 V, 20 V 75 A 380 W - 55 C + 150 C IXGH40N120 Tube
IXYS IGBTs 20 Amps 1700 V 4 V Rds 30In Stock
Min.: 1
Mult.: 1

Si D3PAK-3 (TO-268-3) SMD/SMT Single 1.7 kV 2.7 V - 20 V, 20 V 20 A 110 W - 55 C + 150 C IXGT10N170 Tube
IXYS IGBTs 120 Amps 600V 5In Stock
Min.: 1
Mult.: 1

Si TO-247-PLUS-3 Through Hole Single 600 V 1.2 V - 20 V, 20 V 200 A 780 W - 55 C + 150 C IXGX120N60 Tube
IXYS IGBTs XPT IGBT C3-Class 600V/190Amp 1In Stock
Min.: 1
Mult.: 1

Si TO-247AD Through Hole Single 600 V 2.2 V - 20 V, 20 V 190 A 830 W - 55 C + 150 C IXXH100N60 Tube
IXYS IGBTs XPT 600V IGBT GenX3 w/Diode 2In Stock
Min.: 1
Mult.: 1

Si Screw Mount Single 600 V 1.8 V - 20 V, 20 V 170 A 500 W - 55 C + 150 C Planar Tube
IXYS IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 290 A 830 W - 55 C + 175 C Tube
IXYS IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 135In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 220 A 650 W - 55 C + 175 C Tube
IXYS IGBTs TO264 3KV 55A BIMOSFET
1.275Expected 22/07/2026
Min.: 1
Mult.: 1

Si TO-264-3 Through Hole Single 3 kV 3.2 V - 25 V, 25 V 130 A 625 W - 55 C + 150 C Very High Voltage Tube