TGF2965-SMTR13

Qorvo
772-TGF2965-SMTR13
TGF2965-SMTR13

Mfr.:

Description:
GaN FETs .03-3GHz,5W,32V,50Ohm GaN RF I/P-Mtch T

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
38,74 € 96.850,00 €

Similar Product

Qorvo TGF2965-SM
Qorvo
GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Restricted Availability: This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
QFN-16
N-Channel
1 Channel
32 V
600 mA
- 7 V, + 2 V
- 40 C
+ 85 C
7.5 W
Brand: Qorvo
Moisture Sensitive: Yes
Packaging: Reel
Product Type: GaN FETs
Series: TGF2965
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN-on-SiC
Part # Aliases: TGF2965-SM
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Attributes selected: 0

Datasheet

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Compliance Codes
USHTS:
8542330001
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

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