It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVTYS014N08HLTWG

Name: onsemi NVTYS014N08HLTWG
Brand: onsemi
SKU: 863-NVTYS014N08HLTWG
Price: 1.57 EUR
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

863-NVTYS014N08HLTWG

Mfr. No:

NVTYS014N08HLTWG

Mfr.:

onsemi

Description:

MOSFETs T8 80V N-CH LL IN LFPAK33 PACKAGE

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVTYS014N08HLTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVTYS014N08HLTWG

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 3.000

Expected 03/08/2026
Factory Lead Time:: 36

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,57 €	1,57 €
	1,48 €	14,80 €
Full Reel (Order in multiples of 3000)
	0,438 €	1.314,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-33
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	13.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	15.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	54 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	7.5 ns
Forward Transconductance - Min:	54 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NVTYS014N08HL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	8.7 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVTYS014N08HLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

NVTYS014N08HL Power MOSFET

onsemi NVTYS014N08HL Power MOSFET is an 80V, 13.9mΩ, and 40A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low R_DS(ON) to minimize conduction losses and low capacitance to minimize driver losses. The NVTYS014N08HL power MOSFET is AEC-Q101 qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications.