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TJ30S06M3L(T6L1,NQ

Name: Toshiba TJ30S06M3L(T6L1,NQ
Brand: Toshiba
SKU: 757-TJ30S06M3LT6L1NQ
Price: 1.95 EUR
Availability: InStock

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Mouser No:

757-TJ30S06M3LT6L1NQ

Mfr. No:

TJ30S06M3L(T6L1,NQ

Mfr.:

Toshiba

Description:

MOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218

Datasheet:

TJ30S06M3L(T6L1,NQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TJ30S06M3L(T6L1,NQ

In Stock: 5.662

Stock:: 5.662 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,95 €	1,95 €
	1,26 €	12,60 €
	0,853 €	85,30 €
	0,681 €	340,50 €
	0,641 €	641,00 €
Full Reel (Order in multiples of 2000)
	0,562 €	1.124,00 €
	0,56 €	2.240,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	21.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	TJ30S06M3L
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	330 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

TJ30S06M3L(T6L1,NQ Datasheet (PDF)

Application Notes

Models

Simulation Model

PCN

Changes in Packing Material and Packing Method (PDF)

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

Automotive Solutions

Toshiba Automotive Solutions offer various automotive semiconductor devices designed to improve driving safety. This includes advanced driver assistance systems (ADAS) using an image recognition processor. Toshiba provides leading-edge semiconductor technologies from a future perspective to deliver comprehensive driver assistance solutions. These solutions, including self-driving, emulate human eyes and other intricate human senses.

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.