Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Toshiba MOSFETs LowON Res MOSFET ID=6A VDSS=100V 590.951In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 60 V 6 A 28 mOhms - 20 V, 20 V 1.5 V 9.3 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVIII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS 72.941In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si N-Channel 1 Channel AEC-Q100 U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=4A VDSS=20V 49.519In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 20 V 4 A 25 mOhms - 8 V, 8 V 400 mV 3.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET V=30V, I-10A 19.096In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 30 V 10 A 20 mOhms - 25 V, 20 V 1 V 13.6 nC - 55 C + 150 C 2.5 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Low ON Resistane MOSFETs 19.545In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 30 V 15 A 6.5 mOhms - 20 V, 20 V 1.1 V 7.5 nC - 55 C + 150 C 2.5 W Enhancement U-MOSIX-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=4A VDSS=30V 30.335In Stock
117.000On Order
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 N-Channel 2 Channel 30 V 4 A 39.1 mOhms - 8 V, 12 V 400 mV 3.2 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-6A 5.790In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
123.000Expected 06/03/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 100 V 3.5 A 51 mOhms - 20 V, 20 V 1.5 V 3.2 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVIII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small-signal MOSFET Power MGMT switch
17.054Expected 13/02/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 12 V 14 A 6.5 mOhms - 10 V, 10 V 1 V 47 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs Small Low ON Resistane MOSFETs
5.994Expected 16/02/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 40 V 12 A 8.9 mOhms - 20 V, 20 V 1.4 V 7.5 nC - 55 C + 150 C 1.25 W Enhancement U-MOSIX-H Reel, Cut Tape, MouseReel