QPD0011 30W/60W 48V GaN on SiC HEMT

Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor) is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
Type
Mounting Style
Technology
Series
Packaging
Qorvo RF Amplifier 3.4-3.6GHz 40Wx80W GaN Transistor Pair Non-Stocked
Min.: 100
Mult.: 100
Reel: 100

3.3 GHz to 3.6 GHz 48 V 65 mA 13.3 dB General Purpose Amplifiers SMD/SMT GaN SiC QPD0011 Reel
Qorvo QPD0011JTR13
Qorvo RF Amplifier 3.4-3.6GHz 40Wx80W 48V GaN Transistor Pa Non-Stocked
Min.: 2.500
Mult.: 2.500
Reel: 2.500

3.4 GHz to 3.6 GHz 12.6 dB SMD/SMT GaN SiC QPD0011 Reel