It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTH4L014N120M3P

Name: onsemi NTH4L014N120M3P
Brand: onsemi
SKU: 863-NTH4L014N120M3P
Price: 24.79 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTH4L014N120M3P

Mfr. No:

NTH4L014N120M3P

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L

Datasheet:

NTH4L014N120M3P Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTH4L014N120M3P

In Stock: 81

Stock:: 81 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	24,79 €	24,79 €
	18,32 €	183,20 €
	18,10 €	1.810,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	127 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.63 V
Qg - Gate Charge:	329 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	686 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	29 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	40 ns
Series:	NTH4L014N120M3P
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	26 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTH4L014N120M3P Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M3P EliteSiC MOSFETs

onsemi M3P EliteSiC MOSFETs are a solution for high-voltage applications with a maximum voltage rating of 1200V. The onsemi M3P MOSFETs come in D2PAK7, TO-247-3LD, and TO-247-4LD packages/ The MOSFETs provide versatility for various design requirements. With a maximum gate-to-source voltage of +22V/-10V, EliteSiC MOSFETs boast improved parasitic capacitances, including Coss, Ciss, and Crss.

NTH4L014N120M3P Silicon Carbide (SiC) MOSFET

The onsemi NTH4L014N120M3P silicon carbide (SiC) MOSFET is optimised for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate drive, but also works well with a 15V gate drive.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.