4500V High Voltage Power MOSFETs

IXYS 4500V High Voltage Power MOSFETs are the highest voltage Power MOSFET product line in the industry in international standard size packages. The current ratings range from 200mA to 2A. IXYS 4500V High Voltage Power MOSFETs specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV.

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
IXYS MOSFETs 4500V 0.9A HV Power MOSFET 166In Stock
Min.: 1
Mult.: 1

Si Through Hole ISOPLUS-i4-PAK-3 N-Channel 1 Channel 4.5 kV 900 mA 80 Ohms - 20 V, 20 V 3.5 V 46 nC - 55 C + 150 C 160 W Enhancement Tube
IXYS MOSFETs 4500V 200mA HV Power MOSFET 296In Stock
510Expected 26/06/2026
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 4.5 kV 200 mA 625 Ohms - 20 V, 20 V 4 V 10.6 nC - 55 C + 150 C 113 W Enhancement Tube
IXYS MOSFETs 4500V 200mA HV Power MOSFET
436On Order
Min.: 1
Mult.: 1

Si Through Hole ISOPLUS-i4-PAK-3 N-Channel 1 Channel 4.5 kV 200 mA 625 Ohms - 20 V, 20 V 4 V 10.6 nC - 55 C + 150 C 78 W Enhancement Tube
IXYS MOSFETs 4500V 1A HV Power MOSFET
116Expected 07/08/2026
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 4.5 kV 3 A 80 Ohms - 20 V, 20 V 3.5 V 46 nC - 55 C + 150 C 520 W Enhancement Tube
IXYS MOSFETs 4500V 2A HV Power MOSFET Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 25

Si Through Hole ISOPLUS-i5-PAK-3 N-Channel 1 Channel 4.5 kV 2 A 20 Ohms - 20 V, 20 V 3.5 V 180 nC - 55 C + 150 C 220 W Enhancement Tube