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SI3493DDV-T1-GE3

Name: Vishay SI3493DDV-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SI3493DDV-T1-GE3
Price: 0.46 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SI3493DDV-T1-GE3

Mfr. No:

SI3493DDV-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs -20V Vds 8V Vgs TSOP-6

Datasheet:

SI3493DDV-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SI3493DDV-T1-GE3

In Stock: 10.255

Stock:: 10.255

Can Dispatch Immediately

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On Order:: 42.000

Expected 16/02/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,464 €	0,46 €
	0,28 €	2,80 €
	0,177 €	17,70 €
	0,134 €	67,00 €
	0,12 €	120,00 €
Full Reel (Order in multiples of 3000)
	0,105 €	315,00 €
	0,095 €	570,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSOP-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	52.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	40 ns
Forward Transconductance - Min:	30 S
Product Type:	MOSFETs
Rise Time:	20 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	115 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	20 mg

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Datasheet

SI3493DDV-T1-GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET Gen III P-Channel Power MOSFETs

Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs feature low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes, including micro-foot, PowerPAK®, and TSOP-6. Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Typical applications include load switches, adapter switches, battery switches, DC motors, and charger switches.

Si3493DDV 20V P-Channel TrenchFET® Gen III MOSFET

Vishay / Siliconix Si3493DDV 20V P-Channel TrenchFET® Gen III MOSFET delivers low on-resistance of 0.05Ω (maximum) at -1.8V_GS. This power MOSFET is available in a single-configuration TSOP-6 package size. Vishay / Siliconix Si3493DDV 20V P-Channel TrenchFET Gen III MOSFET operates in a -55°C to +150°C temperature range. The device provides an on-resistance rating that accommodates a wide range of applications, including load switches, battery switches, PA switches, and battery management in mobile devices.