NCV8406DD1CR2G

onsemi
863-NCV8406DD1CR2G
NCV8406DD1CR2G

Mfr.:

Description:
MOSFETs AUTOMOTIVE SMARTFET

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about onsemi NCV8406DD1CR2G

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.475
Expected 09/06/2026
Factory Lead Time:
13
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,11 € 1,11 €
0,731 € 7,31 €
0,607 € 60,70 €
0,583 € 291,50 €
0,573 € 573,00 €
Full Reel (Order in multiples of 2500)
0,535 € 1.337,50 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOIC-8
N-Channel
2 Channel
60 V
210 mOhms
- 14 V, 14 V
2 V
- 40 C
+ 150 C
1.2 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Dual
Fall Time: 692 ns
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 486 ns
Series: NCV8406DD1CR2G
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 2-Channel
Typical Turn-Off Delay Time: 1600 ns
Typical Turn-On Delay Time: 127 ns
Products found:
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Czech Republic
Assembly Country of Origin:
Philippines
Country of Diffusion:
Czech Republic
The country is subject to change at the time of shipment.

NCV8406DD Dual Self-Protected Low-Side Driver

onsemi NCV8406DD Dual Self-Protected Low-Side Driver is a dual-protected low-side smart, discrete device with a temperature and current limit. The protection features include overcurrent, overtemperature, ESD, and integrated drain-to-gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.

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