FGH50T65UPD

onsemi
512-FGH50T65UPD
FGH50T65UPD

Mfr.:

Description:
IGBTs 650 V 100 A 240 W

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 81

Stock:
81 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,54 € 6,54 €
3,79 € 37,90 €
3,18 € 381,60 €
3,16 € 1.611,60 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
REACH - SVHC:
Si
TO-247
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
100 A
340 W
- 55 C
+ 175 C
FGH50T65UPD
Tube
Brand: onsemi
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 6,390 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

FGAFx0N60 Field Stop IGBTs

onsemi FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. onsemi FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

FGHx0T65 650V Field Stop IGBTs

onsemi FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.