QPD0005TR13

Qorvo
772-QPD0005TR13
QPD0005TR13

Mfr.:

Description:
GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
5,23 € 13.075,00 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
14,90 €
Min:
1

Similar Product

Qorvo QPD0005SR
Qorvo
GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor
Restricted Availability: This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
48 V
Brand: Qorvo
Gain: 18.8 dB
Maximum Drain Gate Voltage: 48 V
Maximum Operating Frequency: 5 GHz
Minimum Operating Frequency: 2.5 GHz
Moisture Sensitive: Yes
Output Power: 5 W
Packaging: Reel
Product Type: GaN FETs
Series: QPD0005
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Part # Aliases: QPD0005 QPD0005SR
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
USHTS:
8541497080
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.