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IRLML0040TRPBF

Name: Infineon IRLML0040TRPBF
Brand: Infineon Technologies
SKU: 942-IRLML0040TRPBF
Price: 0.4 EUR
Availability: InStock

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Mouser No:

942-IRLML0040TRPBF

Mfr. No:

IRLML0040TRPBF

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFT 40V 3.6A 56mOhm 2.6nC Qg

Datasheet:

IRLML0040TRPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IRLML0040TRPBF

In Stock: 664

Stock:: 664

Can Dispatch Immediately

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On Order:: 83.150

Expected 23/04/2026
Factory Lead Time:: 17

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,404 €	0,40 €
	0,221 €	2,21 €
	0,14 €	14,00 €
	0,117 €	58,50 €
	0,105 €	105,00 €
Full Reel (Order in multiples of 3000)
	0,079 €	237,00 €
	0,075 €	450,00 €
	0,061 €	549,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	78 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	2.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.3 W
Channel Mode:	Enhancement
Tradename:	HEXFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.3 ns
Forward Transconductance - Min:	6.2 s
Product Type:	MOSFETs
Rise Time:	5.4 ns
Series:	N-Channel
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	6.4 ns
Typical Turn-On Delay Time:	5.1 ns
Unit Weight:	8 mg

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Datasheet

IRLML0040TRPBF Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Resonant Wireless Charging - Consumer Applications

Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With excellent figure of merit (FOM) for gate charge times, R_DS(on) and Coss, these charging solutions enable 6.78MHz inverter designs. Advanced power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.