750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

Results: 23
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
ROHM Semiconductor SiC MOSFETs TO247 750V 105A N-CH SIC 402In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 750V 51A N-CH SIC 2.008In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 750V 56A N-CH SIC 635In Stock
Min.: 1
Mult.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 750V 56A N-CH SIC 375In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 750V 31A N-CH SIC 1.946In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 120A SIC 1.000In Stock
Min.: 1
Mult.: 1
Reel: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 120 A 4.8 V 170 nC + 175 V 405 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 80A SIC 500In Stock
Min.: 1
Mult.: 1
Reel: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 430In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 700In Stock
Min.: 1
Mult.: 1
Reel: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TOLL 750V 26A SIC 784In Stock
Min.: 1
Mult.: 1
Reel: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 61A SIC 100In Stock
Min.: 1
Mult.: 1
Reel: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 61 A 4.8 V 94 nC + 175 V 214 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 37A SIC 8In Stock
2.000Expected 17/07/2026
Min.: 1
Mult.: 1
Reel: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 750V 51A N-CH SIC 1.460In Stock
Min.: 1
Mult.: 1
Max.: 100
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 750V 31A N-CH SIC 3.032In Stock
Min.: 1
Mult.: 1
Max.: 100
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 45 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 750V 105A N-CH SIC 615In Stock
Min.: 1
Mult.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 750V 98A N-CH SIC 344In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 98 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 750V 34A N-CH SIC 588In Stock
Min.: 1
Mult.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 750V 34A N-CH SIC 321In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 46A SIC
2.000Expected 16/07/2026
Min.: 1
Mult.: 1
Max.: 100
Reel: 2.000

SMD/SMT TOLL-9 N Channel 1 Channel 750 V 46 A 4.8 V 72 nC + 175 V 164 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450Expected 14/05/2026
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450Expected 14/05/2026
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs 750V, 45mO, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
1.000Expected 14/05/2026
Min.: 1
Mult.: 1
Max.: 100
Reel: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement