It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

XPJR6604PB,LXHQ

Name: Toshiba XPJR6604PB,LXHQ
Brand: Toshiba
SKU: 757-XPJR6604PBLXHQ
Price: 2.12 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-XPJR6604PBLXHQ

Mfr. No:

XPJR6604PB,LXHQ

Mfr.:

Toshiba

Description:

MOSFETs 40V UMOS9 0.66mohm S-TOGL

Datasheet:

XPJR6604PB,LXHQ Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba XPJR6604PB,LXHQ

In Stock: 3.360

Stock:: 3.360 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,12 €	2,12 €
	1,31 €	13,10 €
	1,19 €	119,00 €
	1,18 €	590,00 €
Full Reel (Order in multiples of 1500)
	1,04 €	1.560,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	530 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	128 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	54 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	152 ns
Typical Turn-On Delay Time:	73 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

XPJR6604PB,LXHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs

Toshiba L-TOGL and S-TOGL AEC-Q101 40V/80V/100V N-Channel MOSFETs deliver ultra-low on-resistance, a high drain current rating, and high heat dissipation. This is achieved by combining high heat dissipation packages [L-TOGL (large transistor outline gull-wing leads) and S-TOGL (small transistor outline gull-wing leads)] with the U-MOS IX-H and U-MOS X-H chip processes. Toshiba L-TOGL and S-TOGL MOSFETs also offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications. The L-TOGL package is equivalent in size to the existing TO-220SM(W) package. However, XPQR3004PB greatly improves the current rating and significantly lowers the on-resistance to 0.23mΩ typical. L-TOGLs optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.

U-MOSIII MOSFETs

Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.